Shaanxi KeGu New Material Technology Co., Ltd

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Sic Heater Silicon Carbide Heating Elements U W I Type For Furnace

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Shaanxi KeGu New Material Technology Co., Ltd
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City:chaoyang
Province/State:Shaanxi
Country/Region:china
Contact Person:MsYuki
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Sic Heater Silicon Carbide Heating Elements U W I Type For Furnace

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Brand Name :KEGU
Place of Origin :China
Price :200-500 yuan/kg
Payment Terms :L/C,D/A,D/P,T/T,Western Union,MoneyGram
Supply Ability :2,000 pcs/month
Packaging Details :Strong wooden box for Global shipping
Model Number :Customizable
Material :SiC
Composition:SiC :>85%
Color :Black
Density :2.5~2.6g/cm³
Max. Service Temp :1380℃
Flexural Strength :70-90 MPa
Size :Customized
Heat Conduction :23.26 W/(m·℃)
Resistivity :1000~2000 Ω·mm2/m
Tensile Strength :39.2~49 MPa
Max. Service Temp. :1500℃
Linear Thermal Expansion Coefficient (20-1500℃) :5×10⁻⁶/℃
Electrical Resistivity :1000~2000Ω·mm²/m
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U W I Type High Temperature Sic Heater Silicon Carbide Heating Elements For Furnace

Description
Highlight:

Furnace sic heater

,

High temperature sic heater

,

Silicon carbide sic heater

Product Description
silicon carbide SiC heating elements ( heater )
1) Material: Good quality green SiC poeders.
2) Product: A kind of non-metal high temperature electric heating element.
3) Production Process: Made into blank, silicided under high temperature and re-crystallized.
4) Usage: It is widely used in various high temperature laboratory furnace and other electric heating
devices, such as in the industries of magnet, ceramics, power metallurgy, glass, and metallurgy.
5) Character: Higher temperature, antioxidation, anticorrosion, increasing temperature fast, low
coefficient of thermal expansion and so on.
6) Heater Specifications and Resistance Range
Physical properties of elements:
Specific gravity
Bend strength
Hardness
Tensile Strength
Porosity rate
Radiancy
2.6~28g/cm3
>300kg
>9MOH'S
>150kg/cm3
<30%
0.85
The linear expansion coefficient, heat conductivity and specific heat of element will change along withtemperature change. And the relational data are the follows:
Temperature (c)
Linear expansion coefficient (10m/c)
Heat conductivity (kcal/M hrc)
Speciic heat (cal/g'c)
o
/
/
0.148
300
3.8
/
/
400
/
/
0.255
600
4.3
14-18
/
800
/
/
0.294
900
4.5
/
/
1100
/
12-16
/
1200
4.8
/
0.325
1300
/
10-14
/
1500
5.2
/
/

silicon carbide heating element.

Silicon carbide element use in construction, ceramic firing, float glass production, melting of non-ferrous metals, sintering,brazing, and other applications that require operating temperatures of up to 1625°C. Heating elements composed of silicon carbide are typically shaped as rods, tubes, or bars with single or multiple legs and metallized Aluminum extremities; other forms include dumbbells and double or single spirals. Our standard heating elements sizes range between 0.5 to 3 inches in diameters and 1 to 10 feet in length. Custom shapes and sizes are also available by request. Silicon carbide heating elements are generally immediately available in most volumes. American Elements also offers other forms of Silicon Carbide such as bricks, foam, honeycomb, powder (including micron and submicron powders), micronwhiskers, nanoparticles, sponges, sputtering targets, and wool. Additional technical, research and safety (MSDS) information is available.
Specification
Atmosphere
Furnace Temp(℃)
Surface Load(W/cm)
Acting to the element
Soive way
Ammonia
1290
3.8
Acting on SiC to form thus decrease SiO2 protective film
Active at dew point
COr
1450
3.1
Attack SiC
Protecting by quartz tube
18%CO
1500
4
No action
/
20%CO
1370
3.8
Adsorbing C grains to act on SiO2 Protective film
/
Halogen
704
3.8
Attacking SiC and decreasing SiOProtective film
Protecting by quartz tube
Hydrocarbon
1310
3.1
Adsorbing C grains causes hot pollution
Fill with enough air
Hydrogen
1290
3.1
Acting on SiC to form thus decrease SiO2 Protective film
Active at dew point
Methane
1370
3.1
Adsorbing C grains causes hot pollution
/
N
1370
3.1
Acting with SiC forms SiN insulating layer
/
Na
1310
3.8
Attack SiC
Protecting by quartz tube
SO2
1310
3.8
Attack SiC
Protecting by quartz tube
Vacuum
1204
3.8
/
/
Oxygen
1310
3.8
SiC is oxided
/
Waterldifferent contentsl
1090-1370
31-3.6
Acting on SiC forms hydtate of Silicon
/
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Sic Heater Silicon Carbide Heating Elements U W I Type For Furnace
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