Shaanxi KeGu New Material Technology Co., Ltd
Shaanxi KeGu New Material Technology Co., Ltd
Add to Cart
ED Series Equal Diameter Silicon Carbide Rods represent the next generation of high-performance non-metallic heating elements. Manufactured from premium green silicon carbide through advanced processing, high-temperature silicification, and re-crystallization technology, these heating elements feature a revolutionary uniform diameter design that eliminates the traditional thick-end configuration.
The innovative equal-diameter structure provides 30% lower end resistance compared to conventional silicon carbide rods, dramatically reducing thermal stress concentrations and extending service life by up to 40%. Rated for continuous operation at temperatures up to 1500°C, these heating elements deliver exceptional energy efficiency with 15-20% power savings over traditional designs.
Uniform Diameter Design: Eliminates resistance concentration points
Enhanced Durability: 40% longer service life than conventional SiC rods
Superior Energy Efficiency: 15-20% reduced power consumption
High-Temperature Performance: Reliable operation up to 1450°C
Reduced Thermal Stress: Even heat distribution minimizes failure points
Quick Thermal Response: Optimized heat transfer characteristics
Technical Specifications
Maximum Operating Temperature: 1500°C
Diameter Range: Standard and custom sizes available
Power Savings: 15-20% compared to traditional SiC rods
End Resistance: 30% lower than conventional designs
Life Expectancy: 40% longer operational lifespan
These advanced heating elements are specifically engineered for industrial furnaces requiring precise temperature control, consistent performance, and reduced operating costs. The ED Series is compatible with most existing furnace designs and provides superior performance in both oxidizing and inert atmospheres.
| Specific Gravity | 2.6-2.8 g/cm3 | Bend Strength | >300 kg |
| Hardne | >9 MOH'S | Tensile Strength | >150 kg/cm3 |
| Porosity Rate | <30% | Thermal Radiance | 0.85 |
Temperature-Dependent Properties of SiC Heating Elements
|
Temperature (℃) |
Linear Expansion Cofficient (10-6m/℃) |
Thermal Conductivity (kcal/Mgr ℃) |
Specific Heat (cal/g ℃) |
| 0 | / | / | 0.148 |
| 300 | 3.8 | / | / |
| 400 | / | / | 0.255 |
| 600 | 4.3 | 14-18 | / |
| 800 | / | / | 0.294 |
| 900 | 4.5 | / | / |
| 1100 | / | 12-16 | / |
| 1200 | 4.8 | / | 0.325 |
| 1300 | / | 10-14 | / |
| 1500 | 5.2 | / | / |
| Atomosphere | Furnace Temp(℃) |
Surface Load (W/cm2) |
Impact on the Element | Solution |
| Ammonia | 1290 | 3.8 | Acting on SiC to form thus decrease SiO2 protective film | Active at dew point |
| CO2 | 1450 | 3.1 | Erosion of elements | Protecting by quartz tube |
| tube18%CO | 1500 | 4.0 | No action | |
| 20%CO | 1370 | 3.8 | Adsorbing C grains to act on SiO2 protective film | |
| Halogen | 704 | 3.8 | Attacking SiC and decressing SiO2 protective film | Protecting by quartz tube |
| Hydrocarbon | 1310 | 3.1 | Adsorbing C grains causes hot pollution | Filling with enough air |
| Hydrogen | 1290 | 3.1 | Acting on SiC to form thus decrease SiO2 protective film | Active at dew point |
| Menthane | 1370 | 3.1 | Adsorbing C grains causes hot pollution | |
| N | 1370 | 3.1 | Acting with SiC forms SiN insulating layer | |
| Na | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| SO2 | 1310 | 3.8 | Erosion of elements | Protecting by quartz tube |
| Vacuum Atomosphere | 1204 | 3.8 | ||
| Oxygen | 1310 | 3.8 | SiC is oxided | |
|
Water (Different Contents) |
1090~1370 | 3.1~3.6 | Acting on SiC forms hydtate of Sillicon |
Industrial Applications:
Magnetic materials processing and heat treatment
Powder metallurgy sintering furnaces
Technical ceramics production kilns
Glass melting and processing equipment
Metallurgical heat treatment furnaces
Industrial laboratory heating systems
Semiconductor manufacturing equipment